国产DDR3 DDR4 替代镁光 海力士 三星 南亚 HGCHIPS选型表
HGCHIPS —— 三星、海力士、镁光、南亚存储颗粒的国产替代方案。
---
【为什么选我们】
原厂型号 HGCHIPS 替代 优势
交期长、价格高 同规格、同性能 降本 15-30%,交期缩短
固件绑定、切换难 引脚兼容、零改动 不改 PCB、不调固件,直接替换
缺货断供风险 稳定供货、灵活交付 供应链安全,生产不断线
---
【三地布局 · 替代无忧】
节点 职能 替代保障
台湾分公司 技术对接 + 国际采购 拿得到料、跟得上技术
深圳测试中心 100% 检测 + 平台验证 颗颗过关、即插即用
成都办事处 西南覆盖 + 现场支持 就近服务、快速响应
---
【替代范围】
```
DDR3 → 1Gbit ~ 8Gbit | x8 / x16 | 1066 ~ 2133 Mbps
DDR4 → 4Gbit ~ 32Gbit | x8 / x16 | 2666 ~ 3200 Mbps
LPDDR4/LPDDR4X → 4Gbit ~ 128Gbit | x16 / x32 / x64 | 1600 ~ 4266 Mbps
```
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【选型指南】
---
【联系我们】
公司 中山市华工科技有限公司
品牌 HGCHIPS
台湾 技术资源与供应链
深圳 测试验证中心
成都 西南区域服务
---
| 产品系列 | HGCHIPS型号 | 兼容品牌 | 兼容型号 | 容量(Gbit) | 组织方式 | 速度等级 | 工作电压(V) | 封装 | 温度等级 |
| DDR3 | HGD31G08S16 | Samsung | K4B1G0846I-BCK0 | 1 | 128Mx8 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G08S21 | Samsung | K4B1G0846I-BCNB | 1 | 128Mx8 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G16S16 | Samsung | K4B1G1646I-BCK0 | 1 | 64Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G16S18 | Samsung | K4B1G1646I-BCMA | 1 | 64Mx16 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD32G08L16 | Samsung | K4B2G0846F-BYK0 | 2 | 256Mx8 | DDR3-1600 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G08L18 | Samsung | K4B2G0846F-BYMA | 2 | 256Mx8 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16L16 | Samsung | K4B2G1646F-BYK0 | 2 | 128Mx16 | DDR3-1600 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16L18 | Samsung | K4B2G1646F-BYMA | 2 | 128Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16L21 | Samsung | K4B2G1646F-BCNB | 2 | 128Mx16 | DDR3-2133 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08S16 | Samsung | K4B4G0846D-BCK0 | 4 | 512Mx8 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08S18 | Samsung | K4B4G0846D-BCMA | 4 | 512Mx8 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08S21 | Samsung | K4B4G0846D-BCNB | 4 | 512Mx8 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08S16E | Samsung | K4B4G0846E-BCK0 | 4 | 512Mx8 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08L18E | Samsung | K4B4G0846E-BYMA | 4 | 512Mx8 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16S16 | Samsung | K4B4G1646D-BCK0 | 4 | 256Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16S18 | Samsung | K4B4G1646D-BCMA | 4 | 256Mx16 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16S21 | Samsung | K4B4G1646D-BCNB | 4 | 256Mx16 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16S16E | Samsung | K4B4G1646E-BCK0 | 4 | 256Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16L18E | Samsung | K4B4G1646E-BYMA | 4 | 256Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16L21E | Samsung | K4B4G1646E-BYNB | 4 | 256Mx16 | DDR3-2133 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD38G08S16 | Samsung | K4B8G0846D-MCK0 | 8 | 1Gx8 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G08S18 | Samsung | K4B8G0846D-MCMA | 8 | 1Gx8 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G08S21 | Samsung | K4B8G0846D-MCNB | 8 | 1Gx8 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G16S16 | Samsung | K4B8G1646D-MCK0 | 8 | 512Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G16S18 | Samsung | K4B8G1646D-MCMA | 8 | 512Mx16 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G16S21 | Samsung | K4B8G1646D-MCNB | 8 | 512Mx16 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G16H13 | SK Hynix | H5TQ1G63DFR-11C | 1 | 64Mx16 | DDR3-1333 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G16H13E | SK Hynix | H5TQ1G63EFR-11C | 1 | 64Mx16 | DDR3-1333 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD32G08H18 | SK Hynix | H5TQ2G83DFR-RDC | 2 | 256Mx8 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD32G08L18H | SK Hynix | H5TC2G83DFR-RDA | 2 | 256Mx8 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16H18 | SK Hynix | H5TQ2G63DFR-RDC | 2 | 128Mx16 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16L18H | SK Hynix | H5TC2G63DFR-RDA | 2 | 128Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08H18 | SK Hynix | H5TQ4G83CFR-RDC | 4 | 512Mx8 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08L18H | SK Hynix | H5TC4G83EFR-RDI | 4 | 512Mx8 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08L16H | SK Hynix | H5TC4G83EFR-PBA | 4 | 512Mx8 | DDR3-1600 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16H18 | SK Hynix | H5TQ4G63CFR-RDC | 4 | 256Mx16 | DDR3-1866 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16L18H | SK Hynix | H5TC4G63EFR-RDI | 4 | 256Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16L18HN | SK Hynix | H5TC4G63EFR-RDN | 4 | 256Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16L21H | SK Hynix | H5TC4G63EFR-TEN | 4 | 256Mx16 | DDR3-2133 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16H21H | SK Hynix | H5TQ4G63EFR-TEN | 4 | 256Mx16 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G08L16H | SK Hynix | H5TC8G63CMR-PBA | 8 | 1Gx8 | DDR3-1600 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16M16 | Micron | MT41K128M16JT-125 | 2 | 128Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16M16 | Micron | MT41K256M16HA-125 | 4 | 256Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08M16 | Micron | MT41K512M8RH-125 | 4 | 512Mx8 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G04M16 | Micron | MT41K1G4RH-125 | 8 | 1Gx4 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD38G16M16 | Micron | MT41K512M16HA-125 | 8 | 512Mx16 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G16N13 | Nanya | NT5CB64M16FP-DH | 1 | 64Mx16 | DDR3-1333 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD31G16N13L | Nanya | NT5CC64M16GP-DI | 1 | 64Mx16 | DDR3-1333 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16N13 | Nanya | NT5CB128M16JR-FL | 2 | 128Mx16 | DDR3-1333 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16N18 | Nanya | NT5CC128M16JR-EK | 2 | 128Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD32G16N18I | Nanya | NT5CC128M16JR-EKI | 2 | 128Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 工业级 |
| DDR3 | HGD32G08N16 | Nanya | NT5CB256M8FN-EK | 2 | 256Mx8 | DDR3-1600 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16N18 | Nanya | NT5CC256M16ER-EK | 4 | 256Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16N18I | Nanya | NT5CC256M16ER-EKI | 4 | 256Mx16 | DDR3-1866 | 1.35 | VFBGA-96 | 工业级 |
| DDR3 | HGD34G16N13 | Nanya | NT5CB256M16ER-FL | 4 | 256Mx16 | DDR3-1333 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G16N21 | Nanya | NT5CB256M16CP | 4 | 256Mx16 | DDR3-2133 | 1.5 | VFBGA-96 | 商规 |
| DDR3 | HGD34G08N10 | Nanya | NT5CC512M8EQ-FL | 4 | 512Mx8 | DDR3-1066 | 1.5 | VFBGA-96 | 商规 |
| DDR4 | HGD48G08S26 | Samsung | K4A8G085WC-BCTD | 8 | 1Gx8 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16S26 | Samsung | K4A8G165WC-BCTD | 8 | 512Mx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG16S26 | Samsung | K4AAG165WA-BIWE | 16 | 1Gx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4BG16S26 | Samsung | K4ABG165WA-BIWE | 32 | 2Gx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G08H32 | SK Hynix | H5AN8G8NCJR-XNC | 8 | 1Gx8 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G08H32D | SK Hynix | H5AN8G8NDJR-XNC | 8 | 1Gx8 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G08H29 | SK Hynix | H5AN8G8NCJR-WMC | 8 | 1Gx8 | DDR4-2933 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G08H26 | SK Hynix | H5AN8G8NCJR-VKC | 8 | 1Gx8 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16H32 | SK Hynix | H5AN8G6NCJR-XNC | 8 | 512Mx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16H32D | SK Hynix | H5AN8G6NDJR-XNC | 8 | 512Mx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16H29 | SK Hynix | H5AN8G6NCJR-WMC | 8 | 512Mx16 | DDR4-2933 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16H26 | SK Hynix | H5AN8G6NCJR-VKC | 8 | 512Mx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG08H32 | SK Hynix | H5ANAG8NCMR-XNC | 16 | 2Gx8 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG08H32D | SK Hynix | H5ANAG8NDMR-XNC | 16 | 2Gx8 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG08H29 | SK Hynix | H5ANAG8NCMR-WMC | 16 | 2Gx8 | DDR4-2933 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG08H26 | SK Hynix | H5ANAG8NCMR-VKC | 16 | 2Gx8 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG16H32 | SK Hynix | H5ANAG6NCMR-XNC | 16 | 1Gx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG16H26 | SK Hynix | H5ANAG6NCMR-VKC | 16 | 1Gx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4BG08H32 | SK Hynix | H5ANBG8NABR-XNC | 32 | 4Gx8 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4BG16H32 | SK Hynix | H5ANBG6NAMR-XNC | 32 | 2Gx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD44G16M26 | Micron | MT40A256M16GE-075E | 4 | 256Mx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16M26 | Micron | MT40A512M16HA-075E | 8 | 512Mx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4AG16M26 | Micron | MT40A1G16HA-075E | 16 | 1Gx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD4BG16M26 | Micron | MT40A2G16HA-075E | 32 | 2Gx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD44G16N32 | Nanya | NT5AD256M16E4-JR | 4 | 256Mx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD44G16N32I | Nanya | NT5AD256M16E4-JRI | 4 | 256Mx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 工业级 |
| DDR4 | HGD48G16N32 | Nanya | NT5AD512M16C4-JR | 8 | 512Mx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16N32I | Nanya | NT5AD512M16C4-JRI | 8 | 512Mx16 | DDR4-3200 | 1.2 | FBGA-78/96 | 工业级 |
| DDR4 | HGD48G16N26 | Nanya | NT5AD512M16C4-HR | 8 | 512Mx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 商规 |
| DDR4 | HGD48G16N26I | Nanya | NT5AD512M16C4-HRI | 8 | 512Mx16 | DDR4-2666 | 1.2 | FBGA-78/96 | 工业级 |
| LPDDR4/LPDDR4X | HGD4F16S37 | Samsung | K4F6E3S4HM-GFCL | 16 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F16S37T | Samsung | K4F6E3S4HM-TFCL | 16 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F16S37H | Samsung | K4F6E3S4HM-THCL | 16 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F16S37D | Samsung | K4F6E3D4HB-MFCJ | 16 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F16S37M | Samsung | K4F6E3D4HB-MHCJ | 16 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F08X42 | Samsung | K4F8E304HB-MGCH | 8 | x32 | LPDDR4X-4266 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F32S37 | Samsung | K4FBE3D4HM-THCL | 32 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F04S42 | Samsung | K4F4E164HF-KFCL | 4 | x16 | LPDDR4-4266 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4F04S42H | Samsung | K4F4E164HF-KHCL | 4 | x16 | LPDDR4-4266 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H04S42 | SK Hynix | H54G56BYYVX046 | 32 | x32 | LPDDR4-4266 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H04S42Q | SK Hynix | H54G56BYYQX046 | 32 | x32 | LPDDR4-4266 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H08X42 | SK Hynix | H54G66BYYJX104 | 64 | x32 | LPDDR4X-4266 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H08X42N | SK Hynix | H9HCNNNFBMMVAR-NEH | 64 | x32 | LPDDR4X-4266 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H08X42B | SK Hynix | H9HCNNNFBMBLPR-NEE | 64 | x32 | LPDDR4X-4266 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H08X42F | SK Hynix | H9HCNNNFAMMLXR-NEE | 64 | x32 | LPDDR4X-4266 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H08X37 | SK Hynix | H9HCNNNFAMALTR-NME | 64 | x32 | LPDDR4X-3733 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H08X37F | SK Hynix | H9HCNNNFAMALTR-NME | 64 | x32 | LPDDR4X-3733 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H02S37 | SK Hynix | H9HCNNNBPUMLHR-NME | 16 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H02S32 | SK Hynix | H9HCNNNBPUMLHR-NLE | 16 | x32 | LPDDR4-3200 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H01S37 | SK Hynix | H9HCNNN8KUMLHR-NME | 8 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H01S32 | SK Hynix | H9HCNNN8KUMLHR-NLE | 8 | x32 | LPDDR4-3200 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4H04X42 | SK Hynix | H9HKNNNCRMAVAR-NEH | 32 | x32 | LPDDR4X-4266 | 1.8/1.1/0.6 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M04S18 | Micron | MT53B128M32D1DT-053 | 4 | x32 | LPDDR4-1866 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M04S21 | Micron | MT53E256M16D1FW-046 | 4 | x16 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M08S21 | Micron | MT53D512M16D1DS-046 | 8 | x16 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M16S21 | Micron | MT53D512M32D2DS-046 | 16 | x32 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M16S21E | Micron | MT53E512M32D2DS-046 | 16 | x32 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M32S21 | Micron | MT53E512M64D2HJ-046 | 32 | x64 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M32S21F | Micron | MT53E1G32D2FW-046 | 32 | x32 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M16S21Z | Micron | MT53E1G16D1ZW-046 | 16 | x16 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M24S21 | Micron | MT53E768M32D2ZW-046 | 24 | x32 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M64S21 | Micron | MT53E2G32D4DT-046 | 64 | x32 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M128S21 | Micron | MT53E4G32D8GS-046 | 128 | x32 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M128S21T | Micron | MT53E2G64D8TN-046 | 128 | x64 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M64S21H | Micron | MT53E1G64D4HJ-046 | 64 | x64 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4M64S21N | Micron | MT53D1G64D4NW-046 | 64 | x64 | LPDDR4-2133 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4N08S37 | Nanya | NT6AP256T32AV-J2 | 8 | x32 | LPDDR4-3733 | 1.8/1.1/1.1 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4N08S16 | Nanya | NT6CL256T32CM-H1 | 8 | x32 | LPDDR4-1600 | 1.8/1.2/1.2 | VFBGA-200 | 商规 |
| LPDDR4/LPDDR4X | HGD4N04S16 | Nanya | NT6CL128M32CM-H1 | 4 | x32 | LPDDR4-1600 | 1.8/1.2/1.2 | VFBGA-200 | 商规 |